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Design of linear structures on transistor level
Gajdoš, Adam ; Kubánek, David (referee) ; Koton, Jaroslav (advisor)
Bachelor thesis deals with the development of software for automated design frequency filters using active elements instead of inductors. The first part deals with the allocation of frequency filers by transmitted specrum and type of components used. It also deals with working mode in the circuit. Thesis also focuses on the description developmet environment in Wolfram Mathematica,and overall development and also advantages. The next chapter is devoted to the theoretical description of the program and all the necessary theoretical provisions, that are needed to manage the program, i.e. description modified nodal analysis, replacement of MOSFET transistor for Voltage Controlled Current Source and writing passive elements in programming language too. The last chapter is dedicated to the development of the program and detailed description.
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Transport and Noise Characteristics of MOSFET Transistors
Chvátal, Miloš ; Hudec, Lubomír (referee) ; Koktavý, Bohumil (referee) ; Pavelka, Jan (advisor)
This doctoral thesis is focused on the analysis of transport characteristics of submicron and micron transistors MOSFET. The assumption is a constant gradient of concentration, which leads to the fact that the diffusion current density is independent of the distance from the source. Active energy was determined from temperature dependence. The proposed physical model made it possible to determine the value of access resistance between drain and source their temperature dependence. Based on the assumption that the divergence of the gradient of the current density in the channel is zero. IV characteristics of the transistor MOSFET are derived and conducted experimental monitoring current channel depending on the collector voltage for the series of samples with different channel lengths in a wide temperature range from 10 to 350 K. Information on the concentration of charge transport in the channel and the position of the Fermi level at the point of active trap, which is the source of RTS noise, is obtained from the analysis of the transport characteristics. Determining the concentration of charge transport and the position of the Fermi level is important because these variables determine the intensity of quantum transitions and their values are not the same throughout the length of the channel. It was experimentally proved from the analysis of the characteristics of RTS noise that concentration at the local channel decreases with increasing current at a constant voltage on the gate and a variable voltage at the collector. Further, the position of active traps of RTS noise was intended and it was found that this is located near the collector. Active trap is located at the point where the Fermi level coincides with energy level of the traps.
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Switching charger for car batteries 14.4V/6A
Gábel, Marián ; Huták, Petr (referee) ; Martiš, Jan (advisor)
This bachelor's thesis deals with issue of design of a switching charger for car batteries using a fly-back converter. The fly-back converter and its functions are theoretically described in the first chapter, which also explains use of a modification of a circuit. The modification is used because of its increased efficiency compared to the ordinary loss solutions of a relieving circuit. Subsequently, in next chapter the thesis focuses on design of a power section of the circuit, which involves calculations of the circuit’s elements. Subsequently, the MOSFET transistor control design is performed using the UC3844 integrated circuit. The charger was constructed according to design and its proper functionality was verified by measurements.
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Switching charger for car batteries 14.4V/6A
Gábel, Marián ; Huták, Petr (referee) ; Martiš, Jan (advisor)
This bachelor's thesis deals with issue of design of a switching charger for car batteries using a fly-back converter. The fly-back converter and its functions are theoretically described in the first chapter, which also explains use of a modification of a circuit. The modification is used because of its increased efficiency compared to the ordinary loss solutions of a relieving circuit. Subsequently, in next chapter the thesis focuses on design of a power section of the circuit, which involves calculations of the circuit’s elements. Subsequently, the MOSFET transistor control design is performed using the UC3844 integrated circuit. The charger was constructed according to design and its proper functionality was verified by measurements.
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|
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Design of linear structures on transistor level
Gajdoš, Adam ; Kubánek, David (referee) ; Koton, Jaroslav (advisor)
Bachelor thesis deals with the development of software for automated design frequency filters using active elements instead of inductors. The first part deals with the allocation of frequency filers by transmitted specrum and type of components used. It also deals with working mode in the circuit. Thesis also focuses on the description developmet environment in Wolfram Mathematica,and overall development and also advantages. The next chapter is devoted to the theoretical description of the program and all the necessary theoretical provisions, that are needed to manage the program, i.e. description modified nodal analysis, replacement of MOSFET transistor for Voltage Controlled Current Source and writing passive elements in programming language too. The last chapter is dedicated to the development of the program and detailed description.
|
|
|
Transport and Noise Characteristics of MOSFET Transistors
Chvátal, Miloš ; Hudec, Lubomír (referee) ; Koktavý, Bohumil (referee) ; Pavelka, Jan (advisor)
This doctoral thesis is focused on the analysis of transport characteristics of submicron and micron transistors MOSFET. The assumption is a constant gradient of concentration, which leads to the fact that the diffusion current density is independent of the distance from the source. Active energy was determined from temperature dependence. The proposed physical model made it possible to determine the value of access resistance between drain and source their temperature dependence. Based on the assumption that the divergence of the gradient of the current density in the channel is zero. IV characteristics of the transistor MOSFET are derived and conducted experimental monitoring current channel depending on the collector voltage for the series of samples with different channel lengths in a wide temperature range from 10 to 350 K. Information on the concentration of charge transport in the channel and the position of the Fermi level at the point of active trap, which is the source of RTS noise, is obtained from the analysis of the transport characteristics. Determining the concentration of charge transport and the position of the Fermi level is important because these variables determine the intensity of quantum transitions and their values are not the same throughout the length of the channel. It was experimentally proved from the analysis of the characteristics of RTS noise that concentration at the local channel decreases with increasing current at a constant voltage on the gate and a variable voltage at the collector. Further, the position of active traps of RTS noise was intended and it was found that this is located near the collector. Active trap is located at the point where the Fermi level coincides with energy level of the traps.
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